Paper Title:
Hall Effect Measurements on Transmutation Doped Semiconductors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 248-249)
Edited by
A.G. Balogh and G. Walter
Pages
119-124
DOI
10.4028/www.scientific.net/MSF.248-249.119
Citation
G. Rohrlack, K. Freitag, C. von Nathusius, R. Vianden, R. Gwilliam, B. J. Sealy, "Hall Effect Measurements on Transmutation Doped Semiconductors", Materials Science Forum, Vols. 248-249, pp. 119-124, 1997
Online since
May 1997
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Price
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