Paper Title:
Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 248-249)
Edited by
A.G. Balogh and G. Walter
Pages
237-240
DOI
10.4028/www.scientific.net/MSF.248-249.237
Citation
K. Volz, J.K.N. Lindner, B. Stritzker, "Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis", Materials Science Forum, Vols. 248-249, pp. 237-240, 1997
Online since
May 1997
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Price
$32.00
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