Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon |
| Journal |
Materials Science Forum (Volumes 248 - 249) |
| Volume |
Materials Science Applications of Ion Beam Techniques |
| Edited by |
A.G. Balogh and G. Walter |
| Pages |
73-78 |
| DOI |
10.4028/www.scientific.net/MSF.248-249.73 |
| Citation |
J.K.N. Lindner et al., 1997, Materials Science Forum, 248-249, 73 |
| Authors |
J.K.N. Lindner, K. Volz, B. Stritzker |
| Keywords |
Amorphisation, Buried Layers, Epitaxy, IBIEC, IBIIA, Ion Beam Induced Crystallization, Ion-Implantation, Silicon, Silicon Carbide (SiC), TEM |
| Full Paper |
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