Paper Title:
Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 248-249)
Edited by
A.G. Balogh and G. Walter
Pages
73-78
DOI
10.4028/www.scientific.net/MSF.248-249.73
Citation
J.K.N. Lindner, K. Volz, B. Stritzker, "Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon", Materials Science Forum, Vols. 248-249, pp. 73-78, 1997
Online since
May 1997
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Price
$32.00
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