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Materials Science Applications of Ion Beam Techniques

Materials Science Forum Volumes 248 - 249

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• p189 Ion Implantation into Stainless Steel - Depth Selective Phase Analysis with an Improved Mössbauer Technique   [ 215 K ]
  Authors: G. Walter, B. Stahl, R. Gellert, R. Nagel, D.M. Rück, G. Klingelhöfer, E. Krankeleit
• p193 Formation of Aluminum Gradient Films on Stainless Steel by Ion Implantation   [ 240 K ]
  Authors: R.M. Hausner, H. Baumann, Klaus Bethge, F. Noli, P. Misaelides
• p197 Studies on Ion Beam Modification and Analysis Using the Bucharest Cyclotron   [ 307 K ]
  Authors: B. Constantinescu, C. Sarbu, E. Ivanov, D. Plostinaru, R. Bugoi
• p201 Microstructure and Tribology of Carbon Implanted High-Speed-Steel   [ 157 K ]
  Authors: F Jährling, G. Walter, D.M. Rück, Hartmut Fuess
• p205 Investigation of High Fluence Carbon Ion Implanted Titanium   [ 262 K ]
  Authors: A. Königer, A. Wenzel, C. Hammerl, B. Rauschenbach
• p209 Depth Distributions and Wear Behaviour of Ion Implanted Ti6Al4V   [ 279 K ]
  Authors: Harald Schmidt, H. Baumann, D.M. Rück
• p213 Defect Formation in irradiated Nanostructured Materials   [ 334 K ]
  Authors: M. Rose, Adam G. Balogh, Horst Hahn
• p217 TiN Coatings Formed by Dual Beam IBAD Technique   [ 187 K ]
  Authors: B. Rajchel, J. Stanek, E. Wantuch, T. Burakowski, J. Fedotova, A. Sellmann
• p221 Creation of the DLC Layer by the Dual Beam IBAD Technique   [ 213 K ]
  Authors: B. Rajchel, J. Stanek, E. Wantuch, T. Burakowski, J. Fedotova, M. Drwięga, E. Lipińska, A. Sellmann
• p225 Application of High Energy Ion Beams for Local Lifetime Control in Silicon   [ 229 K ]
  Authors: Pavel Hazdra, Jan Vobecký
• p229 Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry   [ 192 K ]
  Authors: T. Lohner, N.Q. Khánh, P. Petrik, M. Fried, E. Kótai, J. Gyulai
• p233 Plasma Immersion Ion Implantation of Nitrogen into Porous Silicon Layers   [ 247 K ]
  Authors: A. Manuaba, I. Pintér, E. Szilágyi, Gábor Battistig, C. Ortega, A. Grosman, G. Amsel
• p237 Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis   [ 326 K ]
  Authors: K. Volz, J.K.N. Lindner, B. Stritzker
• p241 Lattice Damage of Relaxed Si_1-xGe_x Alloys of Various Composition Implanted with 2 MeV Si Ions   [ 239 K ]
  Authors: J.K.N. Lindner
• p245 Auger Depth Profiling with Good Depth Resolution of Low Energy Implantation Induced Ion Mixing   [ 221 K ]
  Authors: A. Sulyok, A. Galisova, M. Menyhard