Paper Title:
Positron Mobility in Semi-Insulating 4H-SiC
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 255-257)
Edited by
Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West
Pages
260-262
DOI
10.4028/www.scientific.net/MSF.255-257.260
Citation
C.D. Beling, S. Fung, S.H. Cheung, M. Gong, C.C. Ling, Y.F. Hu, G. Brauer, "Positron Mobility in Semi-Insulating 4H-SiC", Materials Science Forum, Vols. 255-257, pp. 260-262, 1997
Online since
September 1997
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Price
$32.00
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