Paper Title:
Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 255-257)
Edited by
Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West
Pages
472-474
DOI
10.4028/www.scientific.net/MSF.255-257.472
Citation
S. Eichler, F. Börner, J. Gebauer, R. Krause-Rehberg, "Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation", Materials Science Forum, Vols. 255-257, pp. 472-474, 1997
Online since
September 1997
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