Paper Title:
Evolution of Defect Profiles in He-Implanted Silicon Studied by Slow Positrons
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 255-257)
Edited by
Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West
Pages
665-667
DOI
10.4028/www.scientific.net/MSF.255-257.665
Citation
R. S. Brusa, G. P. Karwasz, N. Tiengo, A. Zecca, F. Corni, C. Nobili, G. Ottaviani, R. Tonini, "Evolution of Defect Profiles in He-Implanted Silicon Studied by Slow Positrons", Materials Science Forum, Vols. 255-257, pp. 665-667, 1997
Online since
September 1997
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.