Paper Title:
Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement
  Abstract

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Periodical
Materials Science Forum (Volumes 255-257)
Edited by
Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West
Pages
701-703
DOI
10.4028/www.scientific.net/MSF.255-257.701
Citation
Y. K. Cho, J.Y. Leem, C. Lee, S.K. Noh, R. Suzuki, T. Odaira, T. Mikado, "Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement", Materials Science Forum, Vols. 255-257, pp. 701-703, 1997
Online since
September 1997
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