Characterization of Defects at the Si/SiO2 Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons |
| Journal |
Materials Science Forum (Volumes 255 - 257) |
| Volume |
Positron Annihilation - ICPA-11 |
| Edited by |
Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West |
| Pages |
718-720 |
| DOI |
10.4028/www.scientific.net/MSF.255-257.718 |
| Citation |
M. Clement et al., 1997, Materials Science Forum, 255-257, 718 |
| Authors |
M. Clement, J.M.M. de Nijs, H. Schut, A. van Veen, P. Balk |
| Keywords |
Implantation Buffer, Interface, MOS System, Poly-Silicon, Positron Annihilation |
| Full Paper |
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