Paper Title:
Characterization of Defects at the Si/SiO2 Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 255-257)
Edited by
Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West
Pages
718-720
DOI
10.4028/www.scientific.net/MSF.255-257.718
Citation
M. Clement, J.M.M. de Nijs, H. Schut, A. van Veen, P. Balk, "Characterization of Defects at the Si/SiO2 Interface of a Polysilicon Gated MOS System by Monoenergetic Positrons", Materials Science Forum, Vols. 255-257, pp. 718-720, 1997
Online since
September 1997
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