HOME CONTACT

Username: Password:

> @scientific.net

Defects in Semiconductors 19

Materials Science Forum Volumes 258 - 263

• Papers
• Abstracts

• p1 Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs   [ 585 K ]
  Authors: R.C. Newman, E.G. Grosche, M.J. Ashwin, B.R. Davidson, D.A. Robbie, R.S. Leigh, M.J.L. Sangster
• p11 Optically-Induced Defects in Si-H Nanoparticles   [ 467 K ]
  Authors: Marilia J. Caldas, R.J. Baierle, E. Molinari, S. Ossicini
• p19 Defects and Doping in III-V Nitrides   [ 446 K ]
  Authors: Chris G. Van de Walle, Jörg Neugebauer
• p27 A Programme for the Future?   [ 412 K ]
  Authors: A.M. Stoneham
• p35 The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium   [ 376 K ]
  Authors: M. Budde, B. Bech Nielsen, P. Leary, Jon P. Goss, R. Jones, Patrick R. Briddon, Sven Öberg, S.J. Breuer
• p41 Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium   [ 348 K ]
  Authors: B. Pajot, E. Artacho, L.I. Khirunenko, Kohei Itho, Eugene E. Haller
• p47 Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium   [ 358 K ]
  Authors: N. Aichele, U. Gommel, K. Lassmann, F. Maier, F. Zeller, Eugene E. Haller, K.M. Itoh, L.I. Khirunenko, V.I. Shakhovtsov, B. Pajot, E. Fogarassy, Hans Joachim Müssig
• p53 DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive ¹¹¹In Atoms in Ge   [ 295 K ]
  Authors: Ch. Zistl, R. Sielemann, H. Hässlein, Sven Gall, D. Bräunig, J. Bollmann
• p59 Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC   [ 294 K ]
  Authors: H. Hässlein, R. Sielemann, Ch. Zistl
• p65 Localization of Nondegenerate Electrons at Random Potential of Charged Impurities   [ 253 K ]
  Authors: M.S. Kagan, E.G. Landsberg, Natalia Zhdanova
• p71 Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge   [ 209 K ]
  Authors: I.V. Altukhov, E.G. Chirkova, M.S. Kagan, K.A. Korolev, V.P. Sinis, K. Schmalz, M.A. Odnoblyudov, I.N. Yassievich
• p77 Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As   [ 295 K ]
  Authors: K.M. Itoh, Takahiro Kinoshita, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, J. Muto, J.W. Farmer, V.I. Ozhogin
• p83 Defects in SiGe   [ 416 K ]
  Authors: Arne Nylandsted-Larsen
• p91 Acceptor States in Boron Doped SiGe Quantum Wells   [ 242 K ]
  Authors: K. Schmalz, M.S. Kagan, I.V. Altukhov, K.A. Korolev, Dmitry Orlov, V.P. Sinis, S.G. Tomas, K.L. Wang, I.N. Yassievich
• p97 Substitutional Carbon in Ge and Si_1-xGe_x.   [ 344 K ]
  Authors: L. Hoffmann, J.C. Bach, J. Lundsgaard Hansen, Arne Nylandsted Larsen, Brian Bech Nielsen, P. Leary, R. Jones, Sven Öberg