Defects in Semiconductors 19
| Paper Title | Page |
|---|---|
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Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs Authors: R.C. Newman, E.G. Grosche, M.J. Ashwin, B.R. Davidson, D.A. Robbie, R.S. Leigh, M.J.L. Sangster |
1 |
|
Optically-Induced Defects in Si-H Nanoparticles Authors: Marilia J. Caldas, R.J. Baierle, E. Molinari, S. Ossicini |
11 |
|
Defects and Doping in III-V Nitrides Authors: Chris G. Van de Walle, Jörg Neugebauer |
19 |
|
Authors: A.M. Stoneham |
27 |
|
The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium Authors: M. Budde, B. Bech Nielsen, P. Leary, Jonathan P. Goss, R. Jones, Patrick R. Briddon, Sven Öberg, S.J. Breuer |
35 |
|
Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium Authors: B. Pajot, E. Artacho, Lyudmila I. Khirunenko, Kohei Itho, Eugene E. Haller |
41 |
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Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium Authors: N. Aichele, U. Gommel, K. Lassmann, F. Maier, F. Zeller, Eugene E. Haller, K.M. Itoh, Lyudmila I. Khirunenko, V.I. Shakhovtsov, B. Pajot, E. Fogarassy, Hans Joachim Müssig |
47 |
|
DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive 111In Atoms in Ge Authors: Ch. Zistl, R. Sielemann, H. Hässlein, Sven Gall, D. Bräunig, J. Bollmann |
53 |
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Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC Authors: H. Hässlein, R. Sielemann, Ch. Zistl |
59 |
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Localization of Nondegenerate Electrons at Random Potential of Charged Impurities Authors: M.S. Kagan, E.G. Landsberg, Natalia Zhdanova |
65 |