Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
1-10 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.1 |
| Citation |
R.C. Newman et al., 1997, Materials Science Forum, 258-263, 1 |
| Authors |
R.C. Newman, E.G. Grosche, M.J. Ashwin, B.R. Davidson, D.A. Robbie, R.S. Leigh, M.J.L. Sangster |
| Keywords |
Force Constants, GaAs, GaP, Gap Modes, Impurity, Line Widths, LVMs |
| Full Paper |
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