Paper Title:

Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs

Periodical Materials Science Forum (Volumes 258 - 263)
Main Theme Defects in Semiconductors 19
Edited by Gordon Davies and Maria Helena Nazaré
Pages 1-10
DOI 10.4028/www.scientific.net/MSF.258-263.1
Citation R.C. Newman et al., 1997, Materials Science Forum, 258-263, 1
Authors R.C. Newman, E.G. Grosche, M.J. Ashwin, B.R. Davidson, D.A. Robbie, R.S. Leigh, M.J.L. Sangster
Keywords Force Constants, GaAs, GaP, Gap Modes, Impurity, Line Widths, LVMs
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