Paper Title:
Implantation Doping and Hydrogen Passivation of GaN
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1099-1104
DOI
10.4028/www.scientific.net/MSF.258-263.1099
Citation
A. Burchard, M. Deicher, D. Forkel-Wirth, E. E. Haller, R. Magerle, A. Prospero, A. Stötzler, the ISOLDE Collaboration, "Implantation Doping and Hydrogen Passivation of GaN", Materials Science Forum, Vols. 258-263, pp. 1099-1104, 1997
Online since
December 1997
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Price
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