Paper Title:

A First-Principles Study of Mg-Related Defects in GaN

Periodical Materials Science Forum (Volumes 258 - 263)
Main Theme Defects in Semiconductors 19
Edited by Gordon Davies and Maria Helena Nazaré
Pages 1137-1142
DOI 10.4028/www.scientific.net/MSF.258-263.1137
Citation K.J. Chang et al., 1997, Materials Science Forum, 258-263, 1137
Authors K.J. Chang, Sun Ghil Lee
Keywords Deep Level Defect, Gallium Nitride (GaN), Photoluminescence (PL)
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