Paper Title:

Structural and Electrical Properties of Threading Dislocations in GaN

Periodical Materials Science Forum (Volumes 258 - 263)
Main Theme Defects in Semiconductors 19
Edited by Gordon Davies and Maria Helena Nazaré
Pages 1203-1210
DOI 10.4028/www.scientific.net/MSF.258-263.1203
Citation J. Elsner et al., 1997, Materials Science Forum, 258-263, 1203
Authors J. Elsner, R. Jones, P.K. Sitch, Thomas Frauenheim, M.I. Heggie, Sven Öberg, Patrick R. Briddon
Keywords Density Function Theory (DFT), Galium Nitride (GaN), Threading Dislocation
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