Paper Title:
Structural and Electrical Properties of Threading Dislocations in GaN
| Periodical |
Materials Science Forum (Volumes 258 - 263)
|
| Main Theme |
Defects in Semiconductors 19
|
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
1203-1210 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.1203 |
| Citation |
J. Elsner et al., 1997, Materials Science Forum, 258-263, 1203 |
| Authors |
J. Elsner, R. Jones, P.K. Sitch, Thomas Frauenheim, M.I. Heggie, Sven Öberg, Patrick R. Briddon |
| Keywords |
Density Function Theory (DFT), Galium Nitride (GaN), Threading Dislocation |
| Price |
US$ 28,- |