Paper Title:
Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
121-126
DOI
10.4028/www.scientific.net/MSF.258-263.121
Citation
H. Ohyama, J. Vanhellemont, E. Simoen, C. Claeys, Y. Takami, K. Hayama, H. Sunaga, J. Poortmans, M. Caymax, "Lattice Defects in Si1-xGex Epitaxial Diodes Induced by 20-MeV Alpha Rays", Materials Science Forum, Vols. 258-263, pp. 121-126, 1997
Online since
December 1997
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