Paper Title:
Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1229-1234
DOI
10.4028/www.scientific.net/MSF.258-263.1229
Citation
A. W. Saxler, K.S. Kim, D. Walker, P. Kung, X. R. Zhang, G.J. Brown, W.C. Mitchel, M. Razeghi, "Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN", Materials Science Forum, Vols. 258-263, pp. 1229-1234, 1997
Online since
December 1997
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