Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
1321-1328 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.1321 |
| Citation |
D.J. Chadi, 1997, Materials Science Forum, 258-263, 1321 |
| Authors |
D.J. Chadi |
| Keywords |
CdTe, Compensation, Divacancy, GaAs, Galium Nitride (GaN), III-V and II-VI Semiconductors, Native Defects, Vacancy, ZnS, ZnSe, ZnTe |
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