Paper Title:
Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
133-138
DOI
10.4028/www.scientific.net/MSF.258-263.133
Citation
S.A. Goodman, F. D. Auret, M. Mamor, P. N.K. Deenapanray, W.E. Meyer, "Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching", Materials Science Forum, Vols. 258-263, pp. 133-138, 1997
Online since
December 1997
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