Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
133-138 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.133 |
| Citation |
S.A. Goodman et al., 1997, Materials Science Forum, 258-263, 133 |
| Authors |
S.A. Goodman, F. Danie Auret, M. Mamor, Prakash N.K. Deenapanray, W.E. Meyer |
| Keywords |
Defect, Ion Etching, Particle Irradiation, Silicon-Germanium (SiGe) |
| Full Paper |
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