Paper Title:
Defect Structures in Heavily In-Doped II-VI Semiconductors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1341-1346
DOI
10.4028/www.scientific.net/MSF.258-263.1341
Citation
V. Ostheimer, T. Filz, J. Hamann, S. Lauer, D. Weber, H. Wolf, T. Wichert, "Defect Structures in Heavily In-Doped II-VI Semiconductors", Materials Science Forum, Vols. 258-263, pp. 1341-1346, 1997
Online since
December 1997
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Price
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