Paper Title:
The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
139-144
DOI
10.4028/www.scientific.net/MSF.258-263.139
Citation
I.A. Buyanova, W.M. Chen, G.R. Pozina, B. Monemar, W.X. Ni, G.V. Hansson, "The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy", Materials Science Forum, Vols. 258-263, pp. 139-144, 1997
Online since
December 1997
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