The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
139-144 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.139 |
| Citation |
I.A. Buyanova et al., 1997, Materials Science Forum, 258-263, 139 |
| Authors |
I.A. Buyanova, W.M. Chen, G.R. Pozina, Bo Monemar, W.X. Ni, G.V. Hansson |
| Keywords |
Luminescence, MBE, Non-Radiative Defects, ODMR, Silicon, Silicon-Germanium (SiGe), Thermal Quenching |
| Full Paper |
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