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Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect

Journal Materials Science Forum (Volumes 258 - 263)
Volume Defects in Semiconductors 19
Edited by Gordon Davies and Maria Helena Nazaré
Pages 145-150
DOI 10.4028/www.scientific.net/MSF.258-263.145
Citation A. Mesli et al., 1997, Materials Science Forum, 258-263, 145
Authors A. Mesli, P. Kringhøj, Arne Nylandsted Larsen
Keywords Deep Level, DLTS, SiGe Alloys, Silicon, Transition Metal
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