Bistability of Oxygen Vacancy in Silicon Dioxide |
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| Journal | Materials Science Forum (Volumes 258 - 263) |
|---|---|
| Volume | Defects in Semiconductors 19 |
| Edited by | Gordon Davies and Maria Helena Nazaré |
| Pages | 1479-1484 |
| DOI | 10.4028/www.scientific.net/MSF.258-263.1479 |
| Citation | Atsushi Oshiyama, 1997, Materials Science Forum, 258-263, 1479 |
| Authors | Atsushi Oshiyama |
| Keywords | Bistability, LDA, Negative-U, Oxygen Vacancy, SiO2 |
| Full Paper | 
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