Paper Title:
Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1503-1508
DOI
10.4028/www.scientific.net/MSF.258-263.1503
Citation
U. Wahl, J.G. Correia, G. Langouche, J.G. Marques, A. Vantomme, the ISOLDE Collaboration, "Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C", Materials Science Forum, Vols. 258-263, pp. 1503-1508, 1997
Online since
December 1997
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