Paper Title:
Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
151-158
DOI
10.4028/www.scientific.net/MSF.258-263.151
Citation
P. M. Mooney, K. Shum, "Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature", Materials Science Forum, Vols. 258-263, pp. 151-158, 1997
Online since
December 1997
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Price
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