Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
151-158 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.151 |
| Citation |
Patricia M. Mooney et al., 1997, Materials Science Forum, 258-263, 151 |
| Authors |
Patricia M. Mooney, Kai Shum |
| Keywords |
Dislocation, D-Lines, DLTS, Hole Traps, Interdiffusion, Photoluminescence (PL), Silicon-Germanium (SiGe), Strain |
| Full Paper |
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