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Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys, p.127
Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching, p.133
The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy, p.139
Gold-Related Levels in Relaxed Si_1-xGe_x Alloy Layers: A Study of the Pinning Effect, p.145
Dislocation-Related Electronic States in Strain-Relaxed Si_1-xGe_x/Si Epitaxial Layers Grown at Low Temperature, p.151
Dislocation Activities in Bulk GeSi Crystals, p.159
Schottky Diodes on Si_1-x-yGe_xC_y Alloys: Measurement of Band Off-Set by DLTS, p.165
Molecular-Dynamics Simulations of Microscopic Defects in Silicon, p.171
Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon, p.179

Home > Materials Science Forum > Defects in Semiconductors 19 > Dislocation-Related Electronic States in...

Paper Title:

Dislocation-Related Electronic States in Strain-Relaxed Si_1-xGe_x/Si Epitaxial Layers Grown at Low Temperature

Periodical	Materials Science Forum (Volumes 258 - 263)
Main Theme	Defects in Semiconductors 19
Edited by	Gordon Davies and Maria Helena Nazaré
Pages	151-158
DOI	10.4028/www.scientific.net/MSF.258-263.151
Citation	Patricia M. Mooney et al., 1997, Materials Science Forum, 258-263, 151
Authors	Patricia M. Mooney, Kai Shum
Keywords	Dislocation, D-Lines, DLTS, Hole Traps, Interdiffusion, Photoluminescence (PL), Silicon-Germanium (SiGe), Strain
Price	US$ 28,-

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