Er-Luminescence in MBE-Grown AlGaAs |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
1583-1588 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.1583 |
| Citation |
Oleg B. Gusev et al., 1997, Materials Science Forum, 258-263, 1583 |
| Authors |
Oleg B. Gusev, E.K. Lindmark, J.P. Prineas, M.S. Bresler, G. Khitrova, H.M. Gibbs, I.N. Yassievich, B.P. Zakharchenya, V.F. Masterov |
| Keywords |
AlGaAs, Erbium, Photoluminescence (PL), Temperature Quenching |
| Full Paper |
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