Paper Title:
Acceptor States in Boron Doped SiGe Quantum Wells
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1613-1618
DOI
10.4028/www.scientific.net/MSF.258-263.1613
Citation
K. Schmalz, M.S. Kagan, I.V. Altukhov, K.A. Korolev, D. Orlov, V.P. Sinis, S.G. Tomas, K.L. Wang, I.N. Yassievich, "Acceptor States in Boron Doped SiGe Quantum Wells", Materials Science Forum, Vols. 258-263, pp. 1613-1618, 1997
Online since
December 1997
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Price
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