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Schottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTS

Journal Materials Science Forum (Volumes 258 - 263)
Volume Defects in Semiconductors 19
Edited by Gordon Davies and Maria Helena Nazaré
Pages 165-170
DOI 10.4028/www.scientific.net/MSF.258-263.165
Citation M. Serpentini et al., 1997, Materials Science Forum, 258-263, 165
Authors M. Serpentini, G. Brémond
Keywords Band-Offset, DLTS, Schottky Contact, Si1-x-yGexCy, Strain, Tungstene
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