Paper Title:
Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1737-1742
DOI
10.4028/www.scientific.net/MSF.258-263.1737
Citation
P. Krispin, R. Hey, H. Kostial, K. Ploog, "Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes", Materials Science Forum, Vols. 258-263, pp. 1737-1742, 1997
Online since
December 1997
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.