Paper Title:
Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEM
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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1755-1760
DOI
10.4028/www.scientific.net/MSF.258-263.1755
Citation
S. Kaiser, H. Preis, O. Ambacher, W. Gebhardt, "Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEM", Materials Science Forum, Vols. 258-263, pp. 1755-1760, 1997
Online since
December 1997
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Price
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