Paper Title:
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1767-1772
DOI
10.4028/www.scientific.net/MSF.258-263.1767
Citation
L. I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov, "Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium", Materials Science Forum, Vols. 258-263, pp. 1767-1772, 1997
Online since
December 1997
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Price
$32.00
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