Paper Title:
The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
1773-1776
DOI
10.4028/www.scientific.net/MSF.258-263.1773
Citation
L. I. Khirunenko, Y.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov, "The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon", Materials Science Forum, Vols. 258-263, pp. 1773-1776, 1997
Online since
December 1997
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Price
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