The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
1773-1776 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.1773 |
| Citation |
Lyudmila I. Khirunenko et al., 1997, Materials Science Forum, 258-263, 1773 |
| Authors |
Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov |
| Keywords |
Elastic Continuum, Elastic Stresses, Isovalent Impurities, Potential Barrier Height, Silicon |
| Full Paper |
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