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Background Doping Effects on Zn Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures

Journal Materials Science Forum (Volumes 258 - 263)
Volume Defects in Semiconductors 19
Edited by Gordon Davies and Maria Helena Nazaré
Pages 1839-0
DOI 10.4028/www.scientific.net/MSF.258-263.1839
Citation Nguyen Hong Ky, 1997, Materials Science Forum, 258-263, 1839
Authors Nguyen Hong Ky
Keywords Column-III Vacancies and Interstitials, Doping Effect, GaAs/AlGaAs, Zn Diffusion
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