Defects and Doping in III-V Nitrides |
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| Journal | Materials Science Forum (Volumes 258 - 263) |
|---|---|
| Volume | Defects in Semiconductors 19 |
| Edited by | Gordon Davies and Maria Helena Nazaré |
| Pages | 19-26 |
| DOI | 10.4028/www.scientific.net/MSF.258-263.19 |
| Citation | Chris G. Van de Walle et al., 1997, Materials Science Forum, 258-263, 19 |
| Authors | Chris G. Van de Walle, Jörg Neugebauer |
| Keywords | Galium Nitride (GaN), H, Magnesium, Nitride, O, Vacancy |
| Full Paper | 
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