Paper Title:
The Trapping of Hydrogen at Carbon Defects in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
253-258
DOI
10.4028/www.scientific.net/MSF.258-263.253
Citation
A. Mainwood, "The Trapping of Hydrogen at Carbon Defects in Silicon", Materials Science Forum, Vols. 258-263, pp. 253-258, 1997
Online since
December 1997
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Price
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