The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
35-40 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.35 |
| Citation |
M. Budde et al., 1997, Materials Science Forum, 258-263, 35 |
| Authors |
M. Budde, B. Bech Nielsen, P. Leary, Jonathan P. Goss, R. Jones, Patrick R. Briddon, Sven Öberg, S.J. Breuer |
| Keywords |
Ab Initio Theory, Ge, H, IR Spectroscopy, Self-Interstitial, Silicon, Uniaxial Stress |
| Full Paper |
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