Paper Title:
Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C
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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
367-372
DOI
10.4028/www.scientific.net/MSF.258-263.367
Citation
J. L. Lindström, T. Hallberg, P. Liberski, B. G. Svensson, L.I. Murin, V.P. Markevich, "Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C", Materials Science Forum, Vols. 258-263, pp. 367-372, 1997
Online since
December 1997
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