Paper Title:
Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
385-390
DOI
10.4028/www.scientific.net/MSF.258-263.385
Citation
P. Liberski, T. Hallberg, B. G. Svensson, J. L. Lindström, M. Kleverman, "Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C", Materials Science Forum, Vols. 258-263, pp. 385-390, 1997
Online since
December 1997
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Price
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