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The Oxygen Dimer in Silicon: Some Experimental Observations, p.361
Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C, p.367
High-Field EPR Spectroscopy of Thermal Donors in Silicon, p.373
Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities, p.379
Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C, p.385
Local Vibrational Modes of Weakly Bound O-H Complexes in SI, p.391
Phonon Scattering in Heat-Treated Cz-Silicon, p.399
Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy, p.405
Influence of the Li Concentration on the Photoluminescence Spectra of Neutron-Irradiated Silicon:Passivation of Radiation Induced Centers, p.411

Home > Materials Science Forum > Defects in Semiconductors 19 > Formation of Ultra Shallow Donors in Silicon by...

Paper Title:

Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

Periodical	Materials Science Forum (Volumes 258 - 263)
Main Theme	Defects in Semiconductors 19
Edited by	Gordon Davies and Maria Helena Nazaré
Pages	385-390
DOI	10.4028/www.scientific.net/MSF.258-263.385
Citation	P. Liberski et al., 1997, Materials Science Forum, 258-263, 385
Authors	P. Liberski, T. Hallberg, Bengt G. Svensson, J. Lennart Lindström, Mats Kleverman
Keywords	Electrical Characterization, Oxygen Clusters, Shallow Thermal Donors
Price	US$ 28,-

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