Paper Title:
High Resolution EELS Study of Extended Defects in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
547-552
DOI
10.4028/www.scientific.net/MSF.258-263.547
Citation
H. Kohno, N. Arai, T. Mabuchi, M. Hirata, S. Takeda, M. Kohyama, M. Terauchi, M. Tanaka, "High Resolution EELS Study of Extended Defects in Silicon", Materials Science Forum, Vols. 258-263, pp. 547-552, 1997
Online since
December 1997
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Price
$32.00
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