Paper Title:
Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
559-564
DOI
10.4028/www.scientific.net/MSF.258-263.559
Citation
M.M. Afanasjev, R. Laiho, L.S. Vlasenko, M.P. Vlasenko, "Application of Spin Dependent Recombination for Investigation of Point Defects in Irradiated Silicon", Materials Science Forum, Vols. 258-263, pp. 559-564, 1997
Online since
December 1997
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Price
$32.00
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