Paper Title:
Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment
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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
565-570
DOI
10.4028/www.scientific.net/MSF.258-263.565
Citation
P. N.K. Deenapanray, F. D. Auret, G. Myburg, W.E. Meyer, S.A. Goodman, "Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment", Materials Science Forum, Vols. 258-263, pp. 565-570, 1997
Online since
December 1997
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