Paper Title:
Recombination Centers in Electron Irradiated Si and GaAs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
629-634
DOI
10.4028/www.scientific.net/MSF.258-263.629
Citation
J.C. Bourgoin, M. Zazoui, M.A. Zaidi, "Recombination Centers in Electron Irradiated Si and GaAs", Materials Science Forum, Vols. 258-263, pp. 629-634, 1997
Online since
December 1997
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Price
$32.00
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