Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
71-76 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.71 |
| Citation |
I.V. Altukhov et al., 1997, Materials Science Forum, 258-263, 71 |
| Authors |
I.V. Altukhov, E.G. Chirkova, M.S. Kagan, K.A. Korolev, V.P. Sinis, K. Schmalz, M.A. Odnoblyudov, I.N. Yassievich |
| Full Paper |
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