Paper Title:
Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
727-732
DOI
10.4028/www.scientific.net/MSF.258-263.727
Citation
A. Pérez-Rodríguez, O. González-Varona, L. Calvo-Barrio, J.R. Morante, H. Wirth, D. Panknin, W. Skorupa, "Raman Scattering Analysis of Defects in 6H-SiC Induced by Ion Implantation", Materials Science Forum, Vols. 258-263, pp. 727-732, 1997
Online since
December 1997
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