Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
77-82 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.77 |
| Citation |
K.M. Itoh et al., 1997, Materials Science Forum, 258-263, 77 |
| Authors |
K.M. Itoh, Takahiro Kinoshita, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, J. Muto, J.W. Farmer, V.I. Ozhogin |
| Keywords |
Compensated Semiconductors, Ionized Impurity Scattering, Mobility |
| Full Paper |
Get the full paper by clicking here
|
