Paper Title:
Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
813-818
DOI
10.4028/www.scientific.net/MSF.258-263.813
Citation
D. Wasik, L. Dmowski, J. Mikucki, J. Lusakowski, L. Hsu, W. Walukiewicz, W.G. Bi, C.W. Tu, "Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures", Materials Science Forum, Vols. 258-263, pp. 813-818, 1997
Online since
December 1997
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