Defects in SiGe |
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| Journal | Materials Science Forum (Volumes 258 - 263) |
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| Volume | Defects in Semiconductors 19 |
| Edited by | Gordon Davies and Maria Helena Nazaré |
| Pages | 83-90 |
| DOI | 10.4028/www.scientific.net/MSF.258-263.83 |
| Authors | Arne Nylandsted-Larsen |
| Keywords | Defect, Diffusion, e-Centre, Molecular Beam Epitaxy, Silicon-Germanium (SiGe) |
| Full Paper | 
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