Defects in SiGe
| Periodical | Materials Science Forum (Volumes 258 - 263) |
|---|---|
| Main Theme | Defects in Semiconductors 19 |
| Edited by | Gordon Davies and Maria Helena Nazaré |
| Pages | 83-90 |
| DOI | 10.4028/www.scientific.net/MSF.258-263.83 |
| Citation | Arne Nylandsted-Larsen, 1997, Materials Science Forum, 258-263, 83 |
| Authors | Arne Nylandsted-Larsen |
| Keywords | Defect, Diffusion, e-Centre, Molecular Beam Epitaxy, Silicon-Germanium (SiGe) |
| Price | US$ 28,- |