Paper Title:

Defects in SiGe

Periodical Materials Science Forum (Volumes 258 - 263)
Main Theme Defects in Semiconductors 19
Edited by Gordon Davies and Maria Helena Nazaré
Pages 83-90
DOI 10.4028/www.scientific.net/MSF.258-263.83
Citation Arne Nylandsted-Larsen, 1997, Materials Science Forum, 258-263, 83
Authors Arne Nylandsted-Larsen
Keywords Defect, Diffusion, e-Centre, Molecular Beam Epitaxy, Silicon-Germanium (SiGe)
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