Paper Title:
Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
879-884
DOI
10.4028/www.scientific.net/MSF.258-263.879
Citation
T. Laine, K. Saarinen, P. J. Hautojärvi, C. Corbel, "Ga Vacancies as Compensating Centers in Homogeneously or δ-Doped GaAs(Si) Layers", Materials Science Forum, Vols. 258-263, pp. 879-884, 1997
Online since
December 1997
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