Paper Title:
Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs
  Abstract

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Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
885-892
DOI
10.4028/www.scientific.net/MSF.258-263.885
Citation
J. Gebauer, R. Krause-Rehberg, C. Domke, P. Ebert, K. Urban, "Positron Annihilation and Scanning Tunneling Microscopy Used to Characterise Defects in Highly Si-Doped GaAs", Materials Science Forum, Vols. 258-263, pp. 885-892, 1997
Online since
December 1997
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