Acceptor States in Boron Doped SiGe Quantum Wells |
| Journal |
Materials Science Forum (Volumes 258 - 263) |
| Volume |
Defects in Semiconductors 19 |
| Edited by |
Gordon Davies and Maria Helena Nazaré |
| Pages |
91-96 |
| DOI |
10.4028/www.scientific.net/MSF.258-263.91 |
| Citation |
K. Schmalz et al., 1997, Materials Science Forum, 258-263, 91 |
| Authors |
K. Schmalz, M.S. Kagan, I.V. Altukhov, K.A. Korolev, Dmitry Orlov, V.P. Sinis, S.G. Tomas, K.L. Wang, I.N. Yassievich |
| Keywords |
Acceptor States, SiGe Quantum Wells, Transport Property |
| Full Paper |
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