Paper Title:
As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 258-263)
Edited by
Gordon Davies and Maria Helena Nazaré
Pages
957-962
DOI
10.4028/www.scientific.net/MSF.258-263.957
Citation
K. Krambrock, M.V.B. Pinheiro, S.M. Medeiros, "As Antisite-Related Defects Detected by Spin-Dependent Recombination in Delta-Doped (Si) GaAs Grown by MBE at Low Temperature", Materials Science Forum, Vols. 258-263, pp. 957-962, 1997
Online since
December 1997
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.